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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION *With TO-220 package www..com *Complement to type D44C Series *Very low collector saturation voltage *Fast switching APPLICATIONS *Designed for various specific and general purpose application *Shunt and switching regulators *Low and high frequency inverters converters and etc.
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
D45C Series
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL PARAMETER D45C1,2,3 VCBO Collector-base voltage D45C4,5,6 D45C7,8,9 D45C10,11,12 D45C1,2,3 VCEO Collector-emitter voltage D45C4,5,6 D45C7,8,9 D45C10,11,12 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -40 -55 -70 -90 -30 -45 -60 -80 -5 -4 -6 -1 30 150 -55~150 V A A A W V V UNIT
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER D45C2,3,5,6,8,9,11,12 D45C1,4,7,10 CONDITIONS IC=-1A ;IB=-50mA MIN
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D45C Series
SYMBOL
TYP.
MAX
UNIT
VCEsat
Collector-emitter saturation voltage
-0.5 IC=-1A ;IB=-0.1A IC=-1A ;IB=-0.1A VCE=Rated VCES VEB=-5V; IC=0 40 IC=-0.2A ; VCE=-1V D45C1,4,7,10 D45C1,4,7,10 IC=-1A ; VCE=-1V 25 10 20 IC=-2A ; VCE=-1V IC=-20mA;VCE=-4V; f=1.0MHz 20 40 -1.3 -100 -10 120
V
VBEsat ICES IEBO
Base-emitter saturation voltage Collector cut-off current Emitter cut-off current D45C2,3,5,6,8,9,11,12
V A A
hFE-1
DC current gain
hFE-2
DC current gain
D45C2,5,8,11 D45C3,6,9,12
fT
Transition frequency
MHz
Switching times tr ts tf Rise time Storage time Fall time IC=-1.0A; VCC=-20V IB1=-IB2=-0.1A 0.2 0.6 0.3 s s s
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
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D45C Series
Fig.2 outline dimensions (unindicated tolerance:0.10 mm)
3


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